96793 Products
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| SN: | Image | Part No. | Manufacturer | Description | Stock | Pricing (Sort by price) | Buy |
| 1 | 
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BUW12A | MULTICOMP PRO | MULTICOMP PRO - BUW12A - Bipolar (BJT) Single Transistor, NPN, 450 V, 8 A, 125 W, TO-247, Through Hole | 61 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 2 | 
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2N4401TF | ONSEMI | ONSEMI - 2N4401TF - Bipolar (BJT) Single Transistor, NPN, 40 V, 999 mA, 625 mW, TO-92, Through Hole | 12567 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 3 | 
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2SC4081FRAT106Q | ROHM | ROHM - 2SC4081FRAT106Q - Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 200 mW, SOT-323, Surface Mount | 2530 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 4 | 
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2N4401TAR | ONSEMI | ONSEMI - 2N4401TAR - Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 1.5 W, TO-92, Through Hole | 11629 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 5 | 
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TCLT1005 | VISHAY | VISHAY - TCLT1005 - Optocoupler, Transistor Output, 1 Channel, SOP, 4 Pins, 60 mA, 5 kV, 160 % | 2919 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 6 | 
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IRFD220PBF | VISHAY | VISHAY - IRFD220PBF - Power MOSFET, N Channel, 200 V, 1.3 A, 0.8 ohm, DIP, Through Hole | 1552 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 7 | 
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IRFI9540GPBF | VISHAY | VISHAY - IRFI9540GPBF - Power MOSFET, P Channel, 100 V, 13 A, 0.2 ohm, TO-220FP, Through Hole | 37 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 8 |
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IPW60R190P6FKSA1 | INFINEON | INFINEON - IPW60R190P6FKSA1 - Power MOSFET, N Channel, 600 V, 20.2 A, 0.171 ohm, TO-247, Through Hole | 3053 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 9 | 
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RRH140P03GZETB | ROHM | ROHM - RRH140P03GZETB - Power MOSFET, P Channel, 30 V, 14 A, 0.005 ohm, SOP, Surface Mount | 2417 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 10 | 
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SIZ980BDT-T1-GE3 | VISHAY | VISHAY - SIZ980BDT-T1-GE3 - Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm | 11843 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 11 | 
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NVBG020N090SC1 | ONSEMI | ONSEMI - NVBG020N090SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK) | 629 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 12 | 
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VOL617A-8X001T | VISHAY | VISHAY - VOL617A-8X001T - Optocoupler, 1 Channel, LSOP, 4 Pins, 60 mA, 5 kV, 130 % | 8003 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 13 | 
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PDTA144ET,215 | NEXPERIA | NEXPERIA - PDTA144ET,215 - Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 47 kohm, 47 kohm | 21536 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 14 | 
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PBSS4041PZ,115 | NEXPERIA | NEXPERIA - PBSS4041PZ,115 - Bipolar (BJT) Single Transistor, PNP, 60 V, 5.7 A, 770 mW, SOT-223, Surface Mount | 39245 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 15 | 
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SMMBTA06LT1G | ONSEMI | ONSEMI - SMMBTA06LT1G - Bipolar (BJT) Single Transistor, NPN, 80 V, 500 mA, 225 mW, SOT-23, Surface Mount | 17906 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 16 | 
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2N4401TFR | ONSEMI | ONSEMI - 2N4401TFR - Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 625 mW, TO-92, Through Hole | 22948 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 17 |
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SMMBT5551LT1G | ONSEMI | ONSEMI - SMMBT5551LT1G - Bipolar (BJT) Single Transistor, NPN, 160 V, 600 mA, 225 mW, SOT-23, Surface Mount | 24455 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 18 | 
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BFU768F,115 | NXP | NXP - BFU768F,115 - Bipolar - RF Transistor, NPN, 2.8 V, 110 GHz, 220 mW, 70 mA, SOT-343F | 1860 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 19 | 
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SST3904HZGT116 | ROHM | ROHM - SST3904HZGT116 - Bipolar (BJT) Single Transistor, NPN, 40 V, 200 mA, 350 mW, SOT-23, Surface Mount | 299 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 20 | 
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SMMBT3906WT1G | ONSEMI | ONSEMI - SMMBT3906WT1G - Bipolar (BJT) Single Transistor, PNP, 40 V, 200 mA, 150 mW, SOT-323, Surface Mount | 36736 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 21 | 
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FF2000XTR17IE5BPSA1 | Infineon Technologies | IGBT Transistors PP IHM I | 24 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 22 | 
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FF1700XTR17IE5DBPSA1 | Infineon Technologies | IGBT Transistors PP IHM I | 24 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 23 | 
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PIMN31PAX | Nexperia | Digital Transistors PIMN31PA/SOT1118/HUSON6 | 2995 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 24 |
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PIMP31PAX | Nexperia | Digital Transistors PIMP31PA/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 25 | 
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PIMP32PAS-QX | Nexperia | Digital Transistors PIMP32PAS-Q/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 26 | 
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TK055U60Z1,RQ | Toshiba | MOSFET 600V DTMOS VI TOLL 55mohm | 5581 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 27 |
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PIMC32PAX | Nexperia | Digital Transistors PIMC32PA/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 28 |
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PIMP31PAS-QX | Nexperia | Digital Transistors PIMP31PAS-Q/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 29 |
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PIMP32PAX | Nexperia | Digital Transistors PIMP32PA/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 30 | 
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FF1200XTR17T2P5BPSA1 | Infineon Technologies | IGBT Modules XHP LV | 24 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 31 |
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PIMN32PAS-QX | Nexperia | Digital Transistors PIMN32PAS-Q/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 32 |
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PIMC31PAS-QX | Nexperia | Digital Transistors PIMC31PAS-Q/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 33 |
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PIMC31PAX | Nexperia | Digital Transistors PIMC31PA/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 34 | 
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AIMBG75R016M1HXTMA1 | Infineon Technologies | MOSFET AUTOMOTIVE_SICMOS | 955 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 35 | 
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IMBG120R022M2HXTMA1 | Infineon Technologies | MOSFET SIC DISCRETE | 959 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 36 | 
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AIMDQ75R008M1HXUMA1 | Infineon Technologies | MOSFET AUTOMOTIVE_SICMOS | 738 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 37 | 
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IMDQ75R008M1HXUMA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | 691 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 38 | 
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NVBG070N120M3S | onsemi | MOSFET Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L | 1599 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 39 |
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PIMC32PAS-QX | Nexperia | Digital Transistors PIMC32PAS-Q/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 40 |
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PIMN31PAS-QX | Nexperia | Digital Transistors PIMN31PAS-Q/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 41 |
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PIMN32PAX | Nexperia | Digital Transistors PIMN32PA/SOT1118/HUSON6 | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 42 | 
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FF1800XTR17T2P5BPSA1 | Infineon Technologies | IGBT Modules XHP LV | 22 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 43 |
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FF1200XTR17T2P5PBPSA1 | Infineon Technologies | IGBT Modules XHP LV | Contact Us |
Min.: 1 Mult.: 1 |
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| 44 | 
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FF4MR12W2M1HPB11BPSA1 | Infineon Technologies | IGBT Transistors EASY STANDARD | 16 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 45 | 
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IXYH40N120B4H1 | IXYS | IGBT Transistors IXYH40N120B4H1 | 373 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 46 | 
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IXYH40N120C4H1 | IXYS | IGBT Transistors IXYH40N120C4H1 | 370 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 47 | 
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IKQ150N65EH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | 341 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 48 | 
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FGH4L50T65MQDC50 | onsemi | IGBT Transistors 650V Field stop 4th generation mid speed IGBT with co-pack SiC diode | 425 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 49 | 
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FGY140T120SWD | onsemi | IGBT Transistors 1200V, 140A Field Stop VII (FS7) Fast Discrete IGBT in Power TO247-3L Packaging 1200V 140A FS7 Fast IGBT Discrete | 632 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 50 | 
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FGY100T120SWD | onsemi | IGBT Transistors 1200V, 100A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging N-Channel, Field Stop VII (FS7), Non-SCR, TO247-3 1200 V, 1.7 V, 100 A | 341 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 51 | 
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IXYK85N120C4H1 | IXYS | IGBT Transistors IXYK85N120C4H1 | 125 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 52 | 
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IKY150N65EH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | 177 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 53 | 
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IPP069N20NM6AKSA1 | Infineon Technologies | MOSFET TRENCH >=100V | 828 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 54 | 
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IPB068N20NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | 769 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 55 | 
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IPF129N20NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | 1000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 56 | 
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IPF067N20NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | 895 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 57 | 
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ISC151N20NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | 695 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 58 | 
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IPT129N20NM6ATMA1 | Infineon Technologies | MOSFET TRENCH >=100V | 1990 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 59 | 
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TPCA8120,L1Q | Toshiba | MOSFET | 3361 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 60 | 
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XPJ1R004PB,LXHQ | Toshiba | MOSFET 40V; UMOS9; MOSFET 1mohm; L-TOGL | 2890 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 61 | 
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NVHL070N120M3S | onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L | 442 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 62 | 
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IMW65R040M2HXKSA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | 490 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 63 | 
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ISC025N08NM5LF2ATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | 4490 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 64 | 
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NTBLS1D5N10MCTXG | onsemi | MOSFET MOSFET - Power, Single, N-Channel, TOLL, 100 V, 1.53 mohm, 312 A | 1963 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 65 |
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NVHL015N065SC1 | onsemi | MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-3L | 440 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 66 |
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NVHL025N065SC1 | onsemi | MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 25mohm, 650V, M2, TO247-3L SiC MOSFET, 650V, 19mohm, 99A | 448 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 67 |
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NTBLS1D7N10MCTXG | onsemi | MOSFET MOSFET, Power, Single N-Channel, 100V, TOLL Package | 2000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 68 | 
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NTMYS003N08LHTWG | onsemi | MOSFET Power MOSFET 80 V, 132 A, 3.3mohm Single N-Channel | 3000 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 69 | 
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NVBG095N65S3F | onsemi | MOSFET Single N-Channel Power MOSFET SUPERFET III, FRFET, 650 V , 36 A, 95 mohm, D2PAK 7 lead SuperFET III 650V 95mohm D2PAK 7 Lead | 800 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 70 |
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IMDQ75R140M1HXUMA1 | Infineon Technologies | MOSFET SILICON CARBIDE MOSFET | 748 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 71 | 
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10N65 | LUGUANG ELECTRONIC | Transistor: N-MOSFET; unipolar; 650V; 10A; 27.5W; TO220F | 54 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 72 | 
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12N65 | LUGUANG ELECTRONIC | Transistor: N-MOSFET; unipolar; 650V; 12A; 33.2W; TO220F | Contact Us |
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Min.: 1 Mult.: 1 |
| 73 | 
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15C01M-TL-E | ONSEMI | Transistor: NPN; bipolar; 15V; 0.7A; 0.3W; SC70,SOT323 | Contact Us |
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Min.: 5 Mult.: 5 |
| 74 | 
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2DA1201Y-7 | DIODES INCORPORATED | Transistor: PNP; bipolar; 120V; 800mA; 1.5W; SOT89 | 905 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 75 | 
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2DA1971-7 | DIODES INCORPORATED | Transistor: PNP; bipolar; 400V; 0.5A; 1.5W; SOT89 | 900 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 76 |
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2DD1664Q-13 | DIODES INCORPORATED | Transistor: NPN; bipolar; 32V; 1A; 1W; SOT89; automotive industry | 990 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 77 | 
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2DD2652-7 | DIODES INCORPORATED | Transistor: NPN; bipolar; 12V; 1.5A; 300mW; SOT323 | 1840 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 78 |
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2DD2679-13 | DIODES INCORPORATED | Transistor: NPN; bipolar; 30V; 2A; 900mW; SOT89 | 2480 *LT 7-14 W Days.. |
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Min.: 5 Mult.: 5 |
| 79 | 
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2N1613 | CDIL | Transistor: NPN; bipolar; 50V; 0.5A; 0.8/3W; TO39; 12dB | 712 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 80 |
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2N1711 | CDIL | Transistor: NPN; bipolar; 50V; 0.5A; 0.8/3W; TO39; 8dB | 1854 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 81 | |
2N1711 PBFREE | Central Semiconductor | Transistor: NPN; bipolar; 50V; 0.5A; 800mW; TO39 | Contact Us |
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Min.: 1 Mult.: 1 |
| 82 |
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2N1893 | CDIL | Transistor: NPN; bipolar; 80V; 0.5A; 0.8/3W; TO39 | 655 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 83 |
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2N2102 | CDIL | Transistor: NPN; bipolar; 65V; 1A; 1/5W; TO39; 6dB | 5837 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 84 | 
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2N2219 | CDIL | Transistor: NPN; bipolar; 40V; 0.8A; 0.8/3W; TO39; 4dB | 2162 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 85 | 
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2N2219A | CDIL | Transistor: NPN; bipolar; 40V; 0.8A; 0.8/3W; TO39; 4dB | 420 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 86 |
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2N2219A PBFREE | Central Semiconductor | Transistor: NPN; bipolar; 40V; 0.8A; 0.8W; TO39 | 500 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 87 | 
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2N2222 | CDIL | Transistor: NPN; bipolar; 30V; 0.8A; 0.5/1.2W; TO18; 4dB | 594 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 88 | 
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2N2222A | CDIL | Transistor: NPN; bipolar; 40V; 0.8A; 0.5/1.2W; TO18; 4dB | Contact Us |
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Min.: 1 Mult.: 1 |
| 89 | 
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2N2222A PBFREE | Central Semiconductor | Transistor: NPN; bipolar; 40V; 0.8A; 0.5W; TO18 | 540 *LT 7-14 W Days.. |
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Min.: 1 Mult.: 1 |
| 90 | 
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2N2222A | DIOTEC SEMICONDUCTOR | Transistor: NPN; bipolar; 40V; 0.6A; 625mW; TO92 | 19975 *LT 7-14 W Days.. |
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Min.: 25 Mult.: 25 |